It is found from the Figure 7 that with increasing the immersion time, value of energy band gap decreases. Journal of Crystal Growth ZnTe has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Transmission spectra of annealed and as-deposited 90 ZnTe. Transmission spectra of Ag doped and un-doped ZnTe samples. Oct 26, Abstract Zinc telluride ZnTe thin films were fabricated by thermal evaporation method on corning glass substrates. American Journal of Applied Science 5:
Retrieved from ” https: Journal of Crystal Growth The CSS has an advantage of efficient utilization of material due to small distance between the source and substrate [ 15 ]. In the next step, Ag doped ZnTe thin films were prepared by dipping as-deposited ZnTe thin films in dilute 0. Its lattice constant is 0. Value of resistivity is decreased from 4.
Can’t read the image? Zinc telluride typically had a cubic sphalerite, or ” zincblende ” crystal structure, but can be also prepared as rocksalt crystals or in hexagonal crystals wurtzite structure.
Journal of Electronic Materials Its lattice constant is 0. Guidelines Upcoming Special Issues. Mnits photorefractive yield can be significantly increased. Select optkcal language oprical interest to view the total content in your interested language. An International Journal of Integrated Ferroelectrics These temperatures were controlled by using temperature controllers.
However, deposition under vacuum has many advantages over the other techniques, because films properties can be controlled more precisely [ 9 ].
On the other hand, with increasing the thickness of the sample at the given temperature and pressure, grain size increases and as a result, resistivity of the material decreases.
When a crystal of such material is subjected to a high-intensity light pulse of subpicosecond duration, it emits thln pulse of terahertz frequency through a nonlinear optical process called optical rectification.
Applied Physics Letters Vanadium -doped zinc telluride, “ZnTe: It exists in both cubic and hexagonal crystal structure.
Silver Doping Effects on ZnTe Thin Films by Thermal Evaporation Technique
J Indian Pure Appl Phys The composition of silver in the sample increased from 0. Its crystal structure is cubiclike that for sphalerite and diamond. X-rays diffraction technique XRD was used to study the structure of samples.
On comparing the as-deposited and annealed sample, it has been found that value of optical transmission increases. Doped Ag samples were then characterized to make the comparison between doped and undoped samples.
In PVD, ZnTe thin films can be fabricated by using closed space sublimation CSS technique [ 10 ], sputtering [ 11 ], electro-deposition process [ 12 ], electron beam evaporation [ 13 ] and also pulse laser deposition technique [ 14 ].
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By adding manganese as an additional dopant ZnTe: Parakh NC Electrical Conduction. ZnTe is important for development of various semiconductor devicesincluding blue LEDslaser diodessolar cellsand components of microwave generators. Thin Solid Films Substrate was kept at a distance of 5 mm from the source. The transmission spectra of Ag doped ZnTe samples are shown chracteristics Figure 6. This is an open-access article distributed under the characteristucs of the Thhin Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Value of resistivity is decreased from 4. Views Read Edit View history. The crystal structure was found to be simple cubic with preferred orientation along direction and polycrystalline in nature. It is found from the Figure 7 that with increasing the immersion time, value of energy band gap decreases.
X-ray diffraction technique was used to investigate the structural behavior of ZnTe samples. Transmission spectra of annealed and as-deposited 90 ZnTe.
characteritsics Retrieved from ” https: J Mater Sci After doping the samples for different immersion times, change in resistivity was also observed. Optical properties such as refractive index, energy band gap and absorption coefficient were calculated by using transmission spectra of range nm to nm wavelength with the help of spectrophotometer. Thin films having large crystallite size show lesser dislocation density than the thin films having low crystallite size and due to large value of dislocation density peak broadening occurs, which indicates presence of defects htin the samples.
ZnTe thin films were doped with silver Ag by dipping in low concentrated solution 0. Zinc oxide Zinc sulfide Zinc selenide. It can also be used in holographic interferometryin reconfigurable optical interconnectionsand in surtzite optical phase conjugation devices.
V”, is a non-linear optical photorefractive material of possible use in the protection of sensors at visible wavelengths. In the next step, Ag doped ZnTe thin films were prepared by dipping as-deposited ZnTe thin films in dilute 0. It was found that with increasing deposition time, thickness increases. The optical thickness d was found by the following relation. It has also been observed that with increasing the thickness, refractive index has decreased.